Semiconductive detectors for charged particles registration in wide energy range

The present work is devoted to study of large volume Si(Li)-detectors at perpendicular and parallel falling of particles on the detector relatively to electric field direction. For producing of the detector in the capacity of initial material the dislocation-free monocrystalline silicon of p-type was taken. Studies show, that forms and energy resolutions do not distinguishing by area of entrance and detector side window. Forms of amplitude spectra both 238Pu α-particles and 207Bi β-particles in different section of detector's sensitive field and topography accounting velocity on sections by area of detector entrance and it side window were studied. Studies show, that designed detectors could working effectively under both the parallel and perpendicular falling of particle on the detector relatively electric field. These detectors could find an application for long-race charged particles registration because in the case of perpendicular falling the sensitive field thickness could reach a considerable values