High-pressure magnetotransport measurements of resonant tunneling via X-minimum related states in AlAs barrier
Creators
- 1. Institute of Experimental Physics, Warsaw University, Warsaw (Poland)
- 2. Department of Physics, University of Nottingham (United Kingdom)
Description
In this paper, we present the results of magnetotransport experiments performed on a single barrier GaAs/AlAs/GaAs heterostructures. Tunnel current was measured as a function of magnetic field of different values of bias voltage and hydrostatic pressure. We observed that the amplitude of magnetooscillations of tunnel current quenched when the requirements for resonant tunnelling were met and it recovered in out-of-resonance conditions. This effect was observed both for tunnelling through donor states and through X-minimum related quasiconfined conduction band states. The fact that also in the latter case the amplitude was restored suggests that this process involved Xz subbands and took place without a participation of phonons (the so-called k||-conserving process. (author)
Additional details
Publishing Information
- Journal Title
- Acta Physica Polonica. Series A
- Journal Volume
- 100
- Journal Issue
- 3
- Journal Page Range
- p. 403-408
- ISSN
- 0587-4246
Conference
- Title
- 30. International School on Physics of Semiconducting Compounds
- Dates
- 1-8 Jun 2001
- Place
- Jaszowiec (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 33001584
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ARSENIDES; CHARGE TRANSPORT; ELECTRIC CONDUCTIVITY; ENERGY LEVELS; GALLIUM ARSENIDES; HETEROJUNCTIONS; MAGNETIC FIELDS; PRESSURE DEPENDENCE; RESONANCE; TUNNEL EFFECT
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- 4 refs, 4 figs