Mechanisms of recombination of excess charge carriers in indium arsenide and solid solutions on its base

Based on the lifetime of excessive current carriers in n- and p-InAs a comparison of the probabilities of the interzonal radiation and Auger recombinations has been made. Experiments on photo-, electro- and cathodeluminescence of indium arsenide and solid solutions of Gasub(x)Insub(1-x) and InAssub(x)Sbsub(1-x) (in the vicinity of InAs) showed that in the n-material the lifetime of excessive current carriers is controlled, in the range of electron density from 1017 to 1019 cm-3 (77-300 K), by the eeh Auger process. In the p-type material the lifetime of excessive current carriers is limited by the ehh3 Auger process with participation of the zone splitted off by spin-orbital interaction. For the given model the lifetimes are consistent with the experimental data