Response properties of YAlO3:Ce scintillation crystal under ion irradiation
- 1. School of Physics, Key Laboratory of Particle Physics and Particle Irradiation (MOE), Shandong University, Jinan 250100 (China)
- 2. Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States)
- 3. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)
- 4. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)
Description
A novel ion-scintillator technique used to evaluate the scintillation response is demonstrated using YAlO3:Ce crystal under H+, He+ and O3+ ions irradiation. The experiment setup, including a forward-scatter target and a time-of-flight telescope, allows quantitative measurement of each ion-scintillator interaction event over a continuous ion energy range, and the related response properties of YAlO3:Ce, including the luminescent photon yield, nonlinear response and energy resolution, have been studied by detailed analysis of the total electronic energy deposition, electronic energy loss density and the displacement damage during ion irradiation process. The measured response properties of YAlO3:Ce under ion irradiation are consistent with that from the gamma tests, which demonstrates that this technique, applicable to small crystals or thin films, can rapidly and effectively evaluate the scintillator performance and, therefore, assist accelerated discovery of radiation detection materials
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2013.01.018Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2013.01.018;
- PII
- S0168-583X(13)00125-0;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 307
- Journal Page Range
- p. 49-54
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 18. international conference on ion beam modifications of materials
- Acronym
- IBMM2012
- Dates
- 2-7 Sep 2012
- Place
- Qingdao (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45065227
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTALS; ENERGY ABSORPTION; ENERGY LOSSES; ENERGY RANGE; ENERGY RESOLUTION; HELIUM IONS; HYDROGEN IONS 1 PLUS; IRRADIATION; LUMINESCENCE; PHOTONS; RADIATION DETECTION; SCINTILLATIONS; TELESCOPES; THIN FILMS
- Descriptors DEC
- ABSORPTION; BOSONS; CATIONS; CHARGED PARTICLES; DETECTION; ELEMENTARY PARTICLES; EMISSION; FILMS; HYDROGEN IONS; IONS; LOSSES; MASSLESS PARTICLES; PHOTON EMISSION; RESOLUTION; SORPTION
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.