Published 1969
| Version v1
Book
Damage mechanism parameters of MOS devices subjected to ionizing radiations
Creators
Description
no abstract available
Additional details
Additional titles
- Original title (French)
- Parametres des mecanismes de degradation des structures MOS soumises aux radiations ionisantes
Publishing Information
- Publisher
- CEA Centre d'Etudes Nucleaires de Grenoble, Lab. d'Electronique et de Technologie de l'Informatique.
- Imprint Place
- Grenoble, France
- Imprint Title
- International Conference on properties and use of MIS structures
- Imprint Pagination
- p. 439-452.
Conference
- Title
- International Conference on properties and use of MIS structures.
- Dates
- 17 Jun 1969.
- Place
- Grenoble, France.
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 2010313
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Progress Report
- Descriptors DEI
- ELECTRON BEAMS; IONIZING RADIATIONS; MOS TRANSISTORS; RADIATION DOSES; RADIATION EFFECTS; RECOVERY; X RADIATION
- Descriptors DEC
- RADIATIONS; TRANSISTORS
Optional Information
- Notes
- Imprint:Colloque International sur les proprietes et l'utilisation des structures MIS.