Published January 28, 2013 | Version v1
Journal article

Effects of anode materials on resistive characteristics of NiO thin films

  • 1. School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)
  • 2. Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084 (China)
  • 3. Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

Description

This letter shows that the NiO-based structure with different anodes has different resistive switching properties. A conical conductive filament (CF) model is proposed for oxygen vacancies distributed in NiO films. Modeling analysis reveals much larger dissolution velocity of CF near anodes than near cathodes during the reset process. Different interfaces shown in Auger electron spectroscopy can be bound with the model to reveal that CF is dissolved in the structure with Pt or Au as anodes, while CF remains constant if the anode material is Ti or Al, which can explain whether switching properties occur in the specific NiO-based structures.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
102
Journal Issue
4
Journal Page Range
p. 042901-042901.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2013 American Institute of Physics