Moessbauer study of heat treated 57Fe implanted silicon

Silicon was implanted at room temperature wi 57Fe ions. The results of annealing below 600 0C show that recovery processes take place in the highly damaged silicon. Heat treatments at 600 0C and higher temperatures lead to qualitatively different results. A considerable rearrangement of the random distribution takes place and Fe-Si precipitates are formed. The suggested β-FeSi2 is stable below 900 0C. The spectrum of the sample heated at 1000 0C can be explained as a superposition of quadrupoles associated with the transformation between β-FeSi2 and α-FeSi2 phases