Published June 2017 | Version v1
Journal article Metadata-only

Composition-ratio control of CuInS2 films using PLD

Creators

  • 1. Department of Electrical and Electronic Engineering, Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016 (Japan)
  • 2. Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuencho, Naka-ku, Sakai, Osaka 599-8531 (Japan)

Description

A sulfur-annealing treatment was investigated to control the sulfur content of epitaxial CuInS2 films grown on GaAs substrate by PLD. The sulfur-annealing treatment improved the surface roughness and film crystallinity. Photoluminescence measurements obtained using the confocal microspectroscopy demonstrated that the annealed films show band-edge emissions over a very large area. Electron-probe microanalysis measurements indicated that the sulfur content of the annealed films was about 50 at.%, and the content of the emission area was more than 50 at.%. Therefore, the sulfur content of epitaxial CuInS2 films was successfully controlled by the sulfur-annealing treatment. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Additional details

Identifiers

DOI
10.1002/pssc.201600213;

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
Journal Volume
14
Journal Issue
6
Journal Page Range
p. 1-4
ISSN
1610-1642
CODEN
PSSCGL

Conference

Title
20. international conference on ternary and multinary compounds
Acronym
20. ICTMC
Dates
5-9 Sep 2016
Place
Halle-Saale (Germany)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
48070102
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CHEMICAL COMPOSITION; COPPER SULFIDES; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; ELECTRON MICROPROBE ANALYSIS; INDIUM SULFIDES; LASER RADIATION; PHOTOLUMINESCENCE; PULSE TECHNIQUES; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; VAPOR DEPOSITED COATINGS; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION
Descriptors DEC
CHALCOGENIDES; CHEMICAL ANALYSIS; COATINGS; COHERENT SCATTERING; COPPER COMPOUNDS; CRYSTAL GROWTH METHODS; DIFFRACTION; DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; EMISSION; EPITAXY; EQUIPMENT; FILMS; HEAT TREATMENTS; INDIUM COMPOUNDS; LUMINESCENCE; MICROANALYSIS; MICROSCOPY; NONDESTRUCTIVE ANALYSIS; PHOTOELECTRIC CELLS; PHOTON EMISSION; PHOTOVOLTAIC CELLS; RADIATIONS; SCATTERING; SOLAR EQUIPMENT; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
With 7 figs.