Published January 2010
| Version v1
Journal article
Damage Pattern of Transient γ-Radiation in 64K CMOS SRAM
Creators
- 1. Northwest Institute of Nuclear Technology, Xi'an (China)
Description
Transient irradiation tests on a 64K CMOS SRAM 6264 were performed with different width γ-pulses. The numbers of upset were measured at different dose rates. Damage pattern in SRAM under transient γ-radiation was presented. The results indicate that the transient upset in 6264 is induced from rail span collapse. (authors)
Additional details
Publishing Information
- Journal Title
- Atomic Energy Science and Technology
- Journal Volume
- 44
- Journal Issue
- 1
- Journal Page Range
- p. 121-123
- ISSN
- 1000-6931
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 43084959
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- DAMAGE; DOSE RATES; GAMMA RADIATION; IRRADIATION; MEMORY DEVICES; PHYSICAL RADIATION EFFECTS; PULSES; TRANSIENTS; WIDTH
- Descriptors DEC
- DIMENSIONS; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; RADIATION EFFECTS; RADIATIONS
Optional Information
- Notes
- 3 figs., 1 erfs.