Published October 1986 | Version v1
Journal article Metadata-only

Growth and properties of CdInSbS4 single crystals

Creators

  • 1. Institute of Physics, Azerbaidzhan SSR Acad. of Sci.

Description

This paper presents results of the synthesis and growth of CdInSbS4 single crystals. The compound was synthesized by melting together stoichiometric amounts of the component elements in evacuated quartz capsules. Results of the microscopic and x-ray analyses showed that for an I2 concentration equal to 3 mg/cm3 and a temperature drop from 990 to 850 K the coarsest CdInSbS4 crystals grew with an octahedral form. The crystals have semiconducting properties and the charge-carrier transport in the nonlinear region of the volt-ampere characteristic is due to double injection. Activation energies of the impurity levels were determined

Additional details

Publishing Information

Journal Title
Inorg. Mater. (Engl. Transl.)
Journal Volume
22
Journal Issue
5
Series
Inorg. Mater. (Engl. Transl.).
Journal Page Range
638-640
ISSN
0020-1685
CODEN
INOMA

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
18045474
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Descriptors DEI
ACTIVATION ENERGY; ANTIMONY SULFIDES; CADMIUM SULFIDES; CARRIER MOBILITY; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; IMPURITIES; INDIUM SULFIDES; LAUE METHOD; MONOCRYSTALS; STOICHIOMETRY; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION
Descriptors DEC
ANTIMONY COMPOUNDS; CADMIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; DIFFRACTION METHODS; ELECTRICAL PROPERTIES; ENERGY; INDIUM COMPOUNDS; MOBILITY; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SCATTERING; SULFIDES; SULFUR COMPOUNDS

Optional Information

Notes
Cover-to-cover translation of Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy (USSR).