Published July 27, 2015 | Version v1
Journal article Metadata-only

The circular polarization inversion in δ〈Mn〉/InGaAs/GaAs light-emitting diodes

Creators

  • 1. Physico-Technical Research Institute, Lobachevsky State University of Nizhni Novgorod, 603950 Nizhni Novgorod (Russian Federation)
  • 2. Instituto de Física "Gleb Wataghin," Universidade Estadual de Campinas, 13083-859 Campinas, SP (Brazil)

Description

We investigated light-emitting diodes consisting of an InGaAs/GaAs quantum well adjacent to a ferromagnetic δ〈Mn〉-layer. The magnetic field-dependent circular polarization obtained from both photo- and electroluminescence shows an unusual sign inversion depending on the growth parameters that can be explained by an interplay of the Zeeman splitting and Mn-hole interaction effects. Our results can help to understand the origin and control of the spin polarization on Mn doped GaAs structures, a fundamental step for the development of Mn-based spintronic devices

Additional details

Identifiers

DOI
10.1063/1.4927645;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
107
Journal Issue
4
Journal Page Range
p. 042406-042406.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47056368
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CONTROL; DOPED MATERIALS; ELECTROLUMINESCENCE; GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; LAYERS; LIGHT EMITTING DIODES; MAGNETIC FIELDS; POLARIZATION; QUANTUM WELLS; SPIN ORIENTATION; ZEEMAN EFFECT
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; ORIENTATION; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES

Optional Information

Notes
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