InN-based layers grown by modified HVPE

This paper contains results on InN and InGaN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire and GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes are carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 750 and ordm;C. Continuous InN layers are grown on GaN/sapphire template substrates. Textured InN layers are deposited on AlN/sapphire and AlGaN/sapphire templates. Arrays of nano-crystalline InN rods with various shapes are grown directly on sapphire substrates. X-ray diffraction rocking curves for the (002)InN reflection have the full width at half maximum (FWHM) as narrow as 270 arcsec for the nano-rods and 460 arcsec for the continuous layers. InxGa1-xN layers with InN content up to 10 mol.% are grown on GaN/sapphire templates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)