Published July 23, 1982
| Version v1
Journal article
Reduction in the effective barrier height in PtSi-p-Si Schottky diodes by using low energy ion implantation
Creators
- 1. General Electric Co., Schenectady, NY (USA). Research and Development Center
Description
A reduction in the effective barrier height in a PtSi-p-Si Schottky diode was achieved using low energy ion implantation to introduce a shallow p+ layer on a p-Si substrate. After the Schottky diode had been implanted with 3 keV 11B+ ions to a dose of 4x1012 ions cm-2, the barrier height was observed to decrease from 0.26 to 0.16 eV. The reduction in barrier height correlated well with the boron concentration found at or near the PtSi-Si interface. (Auth.)
Additional details
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 93
- Journal Issue
- 3-4
- Series
- Thin Solid Films.
- Journal Page Range
- 407-412
- ISSN
- 0040-6090
Conference
- Title
- Symposium on thin films and interfaces.
- Dates
- 16 - 19 Nov 1981.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Switzerland
- INIS RN
- 14729965
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON IONS; BORON 11; CATIONS; ION IMPLANTATION; KEV RANGE 01-10; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PLATINUM SILICIDES; RADIATION DOSES; SCHOTTKY BARRIER DIODES; SILICON
- Descriptors DEC
- ATOMIC IONS; BORON ISOTOPES; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; ISOTOPES; KEV RANGE; LIGHT NUCLEI; MATERIALS; NUCLEI; ODD-EVEN NUCLEI; PLATINUM COMPOUNDS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; STABLE ISOTOPES; TRANSITION ELEMENT COMPOUNDS