Existence of the orthorhombic modification of TIInS2 crystals in the phase diagram composition pressure temperature and it's growth method

Full Text: The growth technology, the results of X-ray investigations and some physical properties of single crystals of orthorhombic modification of TIInS2 were given. From the X-ray investigations (Laue, Weissenberg hunt effect and powdergramm) the lattice parameters and syngony of the grown crystals were defined. The following values of parameters of the lattice-a=6,88A, b=14,04A, Z=4 and calculated density dc=6,59g/sm3 were established. The space group was defined as P2221. The results of dielectric constant in the temperature range 170†300K and photoconductivity spectral dependence at T=300K were presented. It was established that orthorhombic modification of TIInS2 was a slightly (∼0,2V) higher band gap Eg=2.52±0/2eV semiconductor than the monocline one