Published July 2000 | Version v1
Journal article Metadata-only

Simulation of photochemical transformations and photodarkening in photoresist films exposed to pulsed vacuum-ultraviolet radiation

Creators

  • 1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021 (Russian Federation)

Description

A theoretical description of photochemical transformations occurring in the films of chalcogenide vitreous semiconductors (in particular, AsSe) is proposed. Results obtained in studying the photodarkening of thin films of chalcogenide vitreous semiconductors exposed to pulsed radiation of an ArF excimer laser (193 nm) are analyzed. The photochemical transformation is characterized by optical sensitivity on the order of 3 cm3 kJ-1 and a threshold light intensity of ∼17 kJ cm-2 s-1

Additional details

Identifiers

DOI
10.1134/1.1188082;

Publishing Information

Journal Title
Semiconductors
Journal Volume
34
Journal Issue
7
Journal Page Range
p. 825-828
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051890
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
ARSENIC SELENIDES; CHALCOGENIDES; EXCIMER LASERS; LASER RADIATION; OPTICAL PROPERTIES; PHOTOCHEMISTRY; RADIATION EFFECTS; THEORETICAL DATA; THIN FILMS; ULTRAVIOLET RADIATION
Descriptors DEC
ARSENIC COMPOUNDS; CHALCOGENIDES; CHEMISTRY; DATA; ELECTROMAGNETIC RADIATION; FILMS; GAS LASERS; INFORMATION; LASERS; NUMERICAL DATA; PHYSICAL PROPERTIES; RADIATIONS; SELENIDES; SELENIUM COMPOUNDS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 34, 857-860 (No. 7, 2000); (c) 2000 MAIK ''Nauka / Interperiodica''.