Published May 9, 2008
| Version v1
Journal article
Disorder-Recrystallization Effects in Low-Energy Beam-Solid Interactions
- 1. Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States)
- 2. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)
- 3. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
Description
It is widely believed that high-kinetic-energy (>1 keV) recoils in crystalline Si result in the formation of amorphous regions, whereas low-kinetic-energy recoils lead directly to isolated point defects. Here we study the response of a Si crystal using dynamical density-functional calculations and show that recoils of much less than 1 keV result in highly disordered regions that persist for hundreds of femtoseconds. Therefore, beam-induced defect formation is controlled by recrystallization processes during dynamic annealing even following low-energy ion implantation
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 100
- Journal Issue
- 18
- Journal Page Range
- p. 185502-185502.4
- ISSN
- 0031-9007
- CODEN
- PRLTAO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40009766
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CRYSTALS; DENSITY FUNCTIONAL METHOD; ION IMPLANTATION; KINETIC ENERGY; POINT DEFECTS; RECRYSTALLIZATION
- Descriptors DEC
- CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY; HEAT TREATMENTS; VARIATIONAL METHODS
Optional Information
- Notes
- (c) 2008 The American Physical Society