Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing

The authors demonstrate the fabrication of SiC nanocrystals on silicon by carbon ion implantation into silicon followed by electron beam annealing at 1000 deg. C. A continuous asymmetric, pyramidal ridge around 20 nm in height is observed at the boundary between the implanted and unimplanted regions. Adjacent to the ridge within the implanted region appears a trough which is continuous around the perimeter of the implanted/unimplanted boundary. The surface of the unimplanted region consists of pyramidal structures with an average height of 5-10 nm which cover the entire surface