Published 2017 | Version v1
Miscellaneous Metadata-only

Luminescence and electrophysical characteristics of electron irradiated GaAsx-1Px LED's

Creators

  • 1. Institute for Nuclear Research, NANU, Kyiv (Ukraine)
  • 2. Naukovo-Doslyidnij Yinstitut 'Myikroprilad', Kyiv, (Ukraine)
  • 3. Yinstitut Fyizichnoyi Khyimyiyi, Kyiv (Ukraine)
  • 4. Institut of Fiziki Poluprovodnikov, NANUk, Kyiv (Ukraine)

Description

no abstract available

Part of:
XXIV annual scientific conference of Institute for Nuclear Research of National Academy of Sciences of Ukraine

Additional details

Additional titles

Original title (Ukrainian)
Vipromyinyuval'nyi ta elektrofyizichnyi kharakteristiki vikhyidnikh ta opromyinenikh ekektronami GaAsx-1Px svyitlodyiodyiv

Publishing Information

Publisher
INR NAN of Ukraine
Imprint Place
Kyiv (Ukraine)
Imprint Title
XXIV annual scientific conference of Institute for Nuclear Research of National Academy of Sciences of Ukraine
Imprint Pagination
258 p.
Journal Page Range
p. 147-148
Report number
INIS-UA--199

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
48074744
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Non-conventional Literature, No Abstract
Descriptors DEI
ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; LIGHT EMITTING DIODES; PHYSICAL RADIATION EFFECTS; SPECTRA; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; LEPTON BEAMS; PARTICLE BEAMS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE

Optional Information

Notes
Imprint:XXIV shchoryichna naukova konferentsyiya Yinstitutu Yadernikh Doslyidzhen' Natsyional'noyi Akademyiyi Nauk Ukrayini