Published January 2002
| Version v1
Journal article
Electronic structures of defects associated with intrinsic vacancies in PbWO4 crystals
Creators
- 1. Tongji Univ., Shanghai (China). Dept. of Physics
Description
The author presents a study on electronic structure of defects associated with oxygen vacancy Vo and lead vacancy VPb in lead tungstate crystals (PbWO4), by the relativistic self-consistent discrete variational embedded cluster method. Furthermore, the excitation energy is also calculated. The authors found that WO3 + Vo could be the absorption center at 350 nm and 420 nm, and the existence of VPb can diminish the band gap of WO42-
Additional details
Publishing Information
- Journal Title
- Acta Physica Sinica
- Journal Volume
- 51
- Journal Issue
- 1
- Journal Page Range
- p. 125-128
- ISSN
- 1000-3290
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 33018585
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CERN LHC; CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; FUNCTIONAL ANALYSIS; LEAD; LEAD TUNGSTATES; OXYGEN
- Descriptors DEC
- ACCELERATORS; CRYSTAL STRUCTURE; CYCLIC ACCELERATORS; ELEMENTS; LEAD COMPOUNDS; MATHEMATICS; METALS; NONMETALS; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; STORAGE RINGS; SYNCHROTRONS; TRANSITION ELEMENT COMPOUNDS; TUNGSTATES; TUNGSTEN COMPOUNDS