Published 1996 | Version v1
Book

Homo and heteroepitaxial growth of LiTaO3 and LiNbO3 by MBE

  • 1. North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
  • 2. ETH Zuerich (Switzerland)

Description

Thin films and superlattices of LiTaO3 and LiNbO3 were grown on (0001) LiTaO3 and LiNbO3 wafers by molecular beam epitaxy. Solid sources were employed for the evaporation of Li, Ta, and Nb while oxygen was activated in an ECR plasma source. Samples were completely oxidized during the growth as confirmed by quantitative surface analyses. Crystalline films were obtained on both substrates at a growth rate of 0.1 nm/s and substrate temperature of 900 C. Films were c-axis oriented but showed in-plane 60 degree rotational domains. Superlattice structure with a bilayer period of 10 nm was grown on LiNbO3. It showed well defined interfaces and appeared to be strained

Additional details

Additional titles

Augmented title (English)
Molecular Beam Epitaxy

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-304-5
Imprint Title
Epitaxial oxide thin films 2
Imprint Pagination
577 p.
Series
Materials Research Society symposium proceedings, Volume 401.
Journal Page Range
p. 255-260.

Conference

Title
Fall meeting of the Materials Research Society (MRS).
Dates
27 Nov - 1 Dec 1995.
Place
Boston, MA (United States).

Optional Information

Secondary number(s)
CONF-951155--.