Channeling studies of InGaAs ternary alloys and InGaAs/InP superlattices grown by metalorganic chemical vapor deposition

The first experimental results of InGaAs ternary alloys and InGaAs/InP superlattices investigated by ion channeling methods are reported. All samples are grown by metalorganic chemical vapor deposition. It is emphasized that the small atomic displacements from virtual crystal points in the ternary alloys have a very important role for dechanneling. Furthermore, it is revealed that the dechanneling fractions along the <100> directions in the superlattices which have small lattice mismatches (0.1approx.0.3%) are not explained by the model of a strained-layer superlattice, even if the atomic displacements in the ternary alloy layers are taken into account. Main origins of this discrepancy are discussed