Published April 27, 2009 | Version v1
Journal article

Atomic structure for Mg on InN(0001) surface

  • 1. Nanjing National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093 (China)
  • 2. Department of Physics, Henan Normal University, Xinxiang 453007 (China)
  • 3. Department of Mathematics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

Description

Structures of Mg adsorbed on InN(0001) surfaces are theoretically investigated by first-principle calculations. Of all the structures examined, the structure of InN(0001)-(√(3)x√(3))R30o as caused by Mg adsorption at the Top sites with 1/3 monolayers coverage is most energetically favorable. Mg atoms may also substitute indium atoms, or accumulate at the voids inside InN film. The interstitial Mg defects may act as a potential source of compensation for the p-type behavior of Mg-doped InN at the surface.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physleta.2009.03.034

Additional details

Identifiers

DOI
10.1016/j.physleta.2009.03.034;
PII
S0375-9601(09)00346-6;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
373
Journal Issue
20
Journal Page Range
p. 1796-1799
ISSN
0375-9601
CODEN
PYLAAG

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.