Published January 30, 2013 | Version v1
Journal article

Real-time transmission Mueller polarimetry on hydrogenated polymorphous silicon under current injection

  • 1. Total S.A., Gas and Power-R and D Division, Courbevoie (France)
  • 2. Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, 91128 Palaiseau (France)

Description

We report on the use of an innovative optical characterization technique - real-time Mueller polarimetric imaging in transmission - for the characterization of thin-film silicon solar cells. In this work, we used this technique to monitor the evolution of optical retardance induced by the mechanical stresses in hydrogenated amorphous and polymorphous silicon (a-Si:H and pm-Si:H) p-i-n (PIN) solar cells. Under current injection of 200 mA cm-2, the retardance of the pm-Si:H PIN solar cells decreased, while that of the a-Si:H PIN solar cells showed no significant change. After the current injection, the pm-Si:H PIN solar cells showed dramatic macroscopic changes on a scale of tens of micrometres, such as local peel-off and delamination from the substrate. Our results demonstrate that current injection introduces local stress relaxation, which can be efficiently monitored prior to irreversible damage from a decrease in the retardance of the pm-Si:H PIN solar cells.

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/46/4/045304

Additional details

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
46
Journal Issue
4
Journal Page Range
[8 p.]
ISSN
0022-3727
CODEN
JPAPBE