Piezotronic analog-to-digital converters based on strain-gated transistors
- 1. School of Physics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)
- 2. Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea SA1 8EN (United Kingdom)
- 3. College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049 (China)
- 4. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083 (China)
Description
Highlights: • SGTs exhibit multiple functions in single piezotronic transistor, such as voltage converter, comparator, and amplifier. • Three piezotronic ADC architectures are studied based on piezotronic SGTs. • Piezotronic ADCs are important devices for fully functional piezotronic ICs. We report a novel approach to achieve piezotronic analog-to-digital converters (ADCs) based on strain gated transistors (SGTs). A single SGT can act as voltage converter, comparator, and amplifier. The new piezotronic ADC devices benefit from high sensitivity of the piezotronic SGT responding to the external strains. This design can significantly reduce the power consumption and the size of these devices, which are considered as crucial factors in self-powered systems. The fundamental concept of the device design has been demonstrated by three piezotronic ADC architectures formed by various networks comprised of SGTs and resistors. Analog-to-digital conversion and logic operations of these piezotronic ADCs blocks are analyzed and logic truth tables for all those configurations are presented. This design has immense potential for enormous applications in future human-machine interfaces, internet of things, and sensor networks.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nanoen.2018.02.034Additional details
Identifiers
- DOI
- 10.1016/j.nanoen.2018.02.034;
- PII
- S2211285518301022;
Publishing Information
- Journal Title
- Nano Energy (Print)
- Journal Volume
- 46
- Journal Page Range
- p. 423-427
- ISSN
- 2211-2855
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52108656
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- AMPLIFIERS; ANALOG-TO-DIGITAL CONVERTERS; ELECTRIC POTENTIAL; MAN-MACHINE SYSTEMS; RESISTORS; SENSITIVITY; SENSORS; TRANSISTORS
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELECTRONIC EQUIPMENT; EQUIPMENT; SEMICONDUCTOR DEVICES
Optional Information
- Copyright
- Copyright (c) 2018 Elsevier Ltd. All rights reserved.