Published April 2018 | Version v1
Journal article

Piezotronic analog-to-digital converters based on strain-gated transistors

  • 1. School of Physics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)
  • 2. Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea SA1 8EN (United Kingdom)
  • 3. College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049 (China)
  • 4. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083 (China)

Description

Highlights: • SGTs exhibit multiple functions in single piezotronic transistor, such as voltage converter, comparator, and amplifier. • Three piezotronic ADC architectures are studied based on piezotronic SGTs. • Piezotronic ADCs are important devices for fully functional piezotronic ICs. We report a novel approach to achieve piezotronic analog-to-digital converters (ADCs) based on strain gated transistors (SGTs). A single SGT can act as voltage converter, comparator, and amplifier. The new piezotronic ADC devices benefit from high sensitivity of the piezotronic SGT responding to the external strains. This design can significantly reduce the power consumption and the size of these devices, which are considered as crucial factors in self-powered systems. The fundamental concept of the device design has been demonstrated by three piezotronic ADC architectures formed by various networks comprised of SGTs and resistors. Analog-to-digital conversion and logic operations of these piezotronic ADCs blocks are analyzed and logic truth tables for all those configurations are presented. This design has immense potential for enormous applications in future human-machine interfaces, internet of things, and sensor networks.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nanoen.2018.02.034

Additional details

Identifiers

DOI
10.1016/j.nanoen.2018.02.034;
PII
S2211285518301022;

Publishing Information

Journal Title
Nano Energy (Print)
Journal Volume
46
Journal Page Range
p. 423-427
ISSN
2211-2855

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52108656
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
AMPLIFIERS; ANALOG-TO-DIGITAL CONVERTERS; ELECTRIC POTENTIAL; MAN-MACHINE SYSTEMS; RESISTORS; SENSITIVITY; SENSORS; TRANSISTORS
Descriptors DEC
ELECTRICAL EQUIPMENT; ELECTRONIC EQUIPMENT; EQUIPMENT; SEMICONDUCTOR DEVICES

Optional Information

Copyright
Copyright (c) 2018 Elsevier Ltd. All rights reserved.