Published 2008 | Version v1
Journal article Metadata-only

Conduction band filling in In-rich InGaN and InN under hydrostatic pressure

Creators

  • 1. Institute of High Pressure Physics 'Unipress', Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)
  • 2. Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw (Poland)
  • 3. Department of Physics and Astronomy, University of Aarhus, 8000 Aarhus C (Denmark)
  • 4. Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York (United States)
  • 5. FORTH, Institute of Electronic Structure and Lasers, P.O. Box 1527, 71110 Heraklion-Crete, Greece and Department of Physics, University of Crete, P.O. Box 2208, 71003 Heraklion-Crete (Greece)
  • 6. Department of Electrical and Electronics Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

Description

We demonstrate the effect of conduction band shape evolution of InGaN with increasing In content and applying hydrostatic pressure. The influence of conduction band filling on the hydrostatic pressure dependence of photoluminescence in In0.7Ga0.3N and InN is investigated. It is found that the PL pressure coefficient dEPL/dp of InN changes from ∝27 meV/GPa to ∝21 meV/GPa when the electron concentration increases from 3.6 x 1017 cm-3 to 1.1 x 1019 cm-3. In contrast, no significant change of dEPL/dp with electron concentration was observed for In0.7Ga0.3N. We conclude that the pressure sensitivity of the Fermi level, which is responsible for the lowering of dEPL/dp with respect to dEG/dp in InN, is much less prominent in In0.7Ga0.3N than in InN. We attribute this difference to the larger band gap of In0.7Ga0.3N, which lowers the pressure sensitivity of m*. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200778410

Additional details

Identifiers

DOI
10.1002/pssc.200778410;

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
5
Journal Issue
6
Journal Page Range
p. 1488-1490
ISSN
1610-1634

Conference

Title
7. international conference of nitride semiconductors (ICNS-7)
Dates
16-21 Sep 2007
Place
Las Vegas, NV (United States)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
39082974
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
BAND THEORY; EFFECTIVE MASS; ELECTRON DENSITY; ELECTRONIC STRUCTURE; ELECTRONS; EMISSION SPECTRA; ENERGY GAP; EXPERIMENTAL DATA; FERMI LEVEL; GALLIUM NITRIDES; INDIUM NITRIDES; PEAKS; PHOTOLUMINESCENCE; PRESSURE COEFFICIENT; PRESSURE DEPENDENCE; PRESSURE RANGE GIGA PA; PRESSURE RANGE MEGA PA 100-1000
Descriptors DEC
DATA; ELEMENTARY PARTICLES; EMISSION; ENERGY LEVELS; FERMIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; LEPTONS; LUMINESCENCE; MASS; NITRIDES; NITROGEN COMPOUNDS; NUMERICAL DATA; PHOTON EMISSION; PNICTIDES; PRESSURE RANGE; PRESSURE RANGE MEGA PA; REACTIVITY COEFFICIENTS; SPECTRA

Optional Information

Notes
With 3 figs., 9 refs.. SICI: 1610-1634(200805)5:6<1488::AID-PSSC200778410>3.0.TX;2-S