Decoupling of epitaxial graphene via gold intercalation probed by dispersive Raman spectroscopy
Creators
- 1. Semiconductor Materials and Device Group, Electronic and Electrical Engineering, University of Sheffield, Mappin Street, S1 3JD Sheffield (United Kingdom)
- 2. Department of Physics, Freie Universität Berlin, Arnimallee 14, 14195 Berlin (Germany)
- 3. Renishaw, Old Town, Wotton-under-Edge, GL12 7DW Gloucestershire (United Kingdom)
- 4. Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Praha 8 (Czech Republic)
- 5. Department of Materials Science and Engineering, Sir Robert Hadfield Building, Mappin Street, S1 3JD Sheffield (United Kingdom)
Description
Signatures of a superlattice structure composed of a quasi periodic arrangement of atomic gold clusters below an epitaxied graphene (EG) layer are examined using dispersive Raman spectroscopy. The gold-graphene system exhibits a laser excitation energy dependant red shift of the 2D mode as compared to pristine epitaxial graphene. The phonon dispersions in both the systems are mapped using the experimentally observed Raman signatures and a third-nearest neighbour tight binding electronic band structure model. Our results reveal that the observed excitation dependent Raman red shift in gold EG primarily arise from the modifications of the phonon dispersion in gold-graphene and shows that the extent of decoupling of graphene from the underlying SiC substrate can be monitored from the dispersive nature of the Raman 2D modes. The intercalated gold atoms restore the phonon band structure of epitaxial graphene towards free standing graphene
Additional details
Identifiers
- DOI
- 10.1063/1.4920931;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 117
- Journal Issue
- 18
- Journal Page Range
- p. 183103-183103.8
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46116034
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CLATHRATES; COMPARATIVE EVALUATIONS; DECOUPLING; EPITAXY; EXCITATION; GOLD; GRAPHENE; LASER RADIATION; LAYERS; PHONONS; PROBES; RAMAN SPECTROSCOPY; RED SHIFT; SILICON CARBIDES; SUBSTRATES; SUPERLATTICES
- Descriptors DEC
- CARBIDES; CARBON; CARBON COMPOUNDS; CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY-LEVEL TRANSITIONS; EVALUATION; LASER SPECTROSCOPY; METALS; NONMETALS; QUASI PARTICLES; RADIATIONS; SILICON COMPOUNDS; SPECTROSCOPY; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC