Published May 14, 2015 | Version v1
Journal article

Decoupling of epitaxial graphene via gold intercalation probed by dispersive Raman spectroscopy

  • 1. Semiconductor Materials and Device Group, Electronic and Electrical Engineering, University of Sheffield, Mappin Street, S1 3JD Sheffield (United Kingdom)
  • 2. Department of Physics, Freie Universität Berlin, Arnimallee 14, 14195 Berlin (Germany)
  • 3. Renishaw, Old Town, Wotton-under-Edge, GL12 7DW Gloucestershire (United Kingdom)
  • 4. Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Praha 8 (Czech Republic)
  • 5. Department of Materials Science and Engineering, Sir Robert Hadfield Building, Mappin Street, S1 3JD Sheffield (United Kingdom)

Description

Signatures of a superlattice structure composed of a quasi periodic arrangement of atomic gold clusters below an epitaxied graphene (EG) layer are examined using dispersive Raman spectroscopy. The gold-graphene system exhibits a laser excitation energy dependant red shift of the 2D mode as compared to pristine epitaxial graphene. The phonon dispersions in both the systems are mapped using the experimentally observed Raman signatures and a third-nearest neighbour tight binding electronic band structure model. Our results reveal that the observed excitation dependent Raman red shift in gold EG primarily arise from the modifications of the phonon dispersion in gold-graphene and shows that the extent of decoupling of graphene from the underlying SiC substrate can be monitored from the dispersive nature of the Raman 2D modes. The intercalated gold atoms restore the phonon band structure of epitaxial graphene towards free standing graphene

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
117
Journal Issue
18
Journal Page Range
p. 183103-183103.8
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
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