Study of the surface and bulk states of BiTe topological insulators using terahertz time-domain spectroscopy
- 1. School of Physics and Astronomy, Yunnan University, Kunming, 650091 (China)
- 2. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031 (China)
- 3. Micro Optical Instruments Inc, Shenzhen, 518118 (China)
Description
Topological insulators (TIs) are widely recognized as a new state of quantum matter with semiconductor-like or insulator-like bulk states (BSs) and Dirac-like surface states (SSs). Herein, the terahertz (THz) properties of the SSs and BSs in BiTe-based TIs, as well as the effects of temperature on them, are examined. By using THz time-domain spectroscopy, the optical conductance of BiTe is obtained for TI thickness of about 10 and 20 nm. It is shown that the THz responses of the SSs and BSs can be distinguished by purely optical means in a wide temperature range (80-280 K). A Drude formula, which includes two terms corresponding to the SSs and BSs, is applied to describe the behavior of the optical conductance. Moreover, the evidence of bulk-to-surface scattering and additional electron injection from the BSs to the SSs is also observed without the help of electric measurement. These results are helpful to gain an in-depth understanding of the THz properties of TIs and to explore new applications in topologically protected plasmonic and optoelectronic devices. (© 2023 Wiley‐VCH GmbH)
Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. Rapid Research Letters (Online)
- Journal Volume
- 17
- Journal Issue
- 12
- Journal Page Range
- p. 1-8
- ISSN
- 1862-6270
- CODEN
- PSSRCS
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 55019835
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTRA; ATOMIC FORCE MICROSCOPY; BISMUTH TELLURIDES; ELECTRICAL INSULATORS; ELECTRON GAS; ELECTRONIC STRUCTURE; ENERGY GAP; OPTOELECTRONIC DEVICES; RAMAN SPECTRA; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0065-0273 K; THIN FILMS; THZ RANGE; TOPOLOGY; X-RAY DIFFRACTION
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL EQUIPMENT; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; FREQUENCY RANGE; MATERIALS; MATHEMATICS; MICROSCOPY; OPTICAL EQUIPMENT; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SCATTERING; SPECTRA; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE; TRANSDUCERS
Optional Information
- Notes
- AID: 2300008