Published May 1, 2019
| Version v1
Journal article
Enhanced forward stimulated Brillouin scattering in silicon photonic slot waveguide Bragg grating
- 1. Shanghai Key Lab of Navigation and Location Services, State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Institute for Advanced Communication and Data Science, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)
- 2. Department of Electrical and Electronic Engineering, City, University of London, London EC 1V 0HB (United Kingdom)
Description
We study the forward stimulated Brillouin scattering process in a suspended silicon slot waveguide Bragg grating. Full-vectorial formalism is applied to analyze the interplay of electrostriction and radiation pressure. We show that radiation pressure is the dominant factor in the proposed waveguide. The Brillouin gain strongly depends on the structural parameters and the maximum value in the order of 106 W−1 m−1 is obtained in the slow light regime, which is more than two orders larger than that of the stand-alone strip and slot waveguides. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6463/ab06d6Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 52
- Journal Issue
- 18
- Journal Page Range
- [6 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52051841
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- BRAGG REFLECTION; BRILLOUIN EFFECT; RADIATION PRESSURE; SILICON; WAVEGUIDES
- Descriptors DEC
- COHERENT SCATTERING; ELEMENTS; REFLECTION; SCATTERING; SEMIMETALS