Published May 1, 2019 | Version v1
Journal article

Enhanced forward stimulated Brillouin scattering in silicon photonic slot waveguide Bragg grating

  • 1. Shanghai Key Lab of Navigation and Location Services, State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Institute for Advanced Communication and Data Science, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)
  • 2. Department of Electrical and Electronic Engineering, City, University of London, London EC 1V 0HB (United Kingdom)

Description

We study the forward stimulated Brillouin scattering process in a suspended silicon slot waveguide Bragg grating. Full-vectorial formalism is applied to analyze the interplay of electrostriction and radiation pressure. We show that radiation pressure is the dominant factor in the proposed waveguide. The Brillouin gain strongly depends on the structural parameters and the maximum value in the order of 106 W−1 m−1 is obtained in the slow light regime, which is more than two orders larger than that of the stand-alone strip and slot waveguides. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6463/ab06d6

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
52
Journal Issue
18
Journal Page Range
[6 p.]
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52051841
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
BRAGG REFLECTION; BRILLOUIN EFFECT; RADIATION PRESSURE; SILICON; WAVEGUIDES
Descriptors DEC
COHERENT SCATTERING; ELEMENTS; REFLECTION; SCATTERING; SEMIMETALS