Published July 26, 1990 | Version v1
Journal article Metadata-only

Photochemical rearrangement of deep centers in silicon doped with nickel and chromium

Creators

Description

A possibility for occurrence of photochemical rearrangement processes in Si under irradiation with superlow-energy light from the region of impurity absorption is demonstrated taking deep impurity centers of Ni and Cr as an example

Additional details

Additional titles

Original title (Russian)
Фотохимическая перестройка глубоких центров в кремнии, легированном никелем и хромом

Publishing Information

Journal Title
Pis'ma v Zhurnal Tekhnicheskoj Fiziki
Journal Volume
16
Journal Issue
14
Series
Pis'ma Zh. Tekh. Fiz.
Journal Page Range
42-45
ISSN
0320-0116
CODEN
PZTFD

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
23018423
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CHEMICAL RADIATION EFFECTS; CHROMIUM ADDITIONS; CRYSTALS; INTERSTITIALS; LASER RADIATION; NICKEL ADDITIONS; P-TYPE CONDUCTORS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON; TRAPPING; VISIBLE RADIATION
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; LUMINESCENCE; MATERIALS; PHOTON EMISSION; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS