High-temperature oxidation resistance of a Ti–Al–Sn–Zr titanium matrix composites reinforced with in situ TiC and TiSi fabricated by powder metallurgy
Creators
- 1. Institute for Advanced Manufacturing and Modern Equipment Technology, Jiangsu University, Zhenjiang (China)
Description
A mixture of the Ti–Al–Sn–Zr matrix powder and SiC particles was used as a raw powder to fabricate an in situ TiC and TiSi reinforced titanium matrix composites (TMCs) via low energy ball milling–cold press forming–argon-protected sintering. The effects of various content of SiCp on the microstructure, phase composition and high-temperature oxidation behavior of the composites at 750 °C and 850 °C were studied. XRD results show that the oxidation phases were mainly composed of TiO, AlO, SiO and α-Ti. According to the SEM images, the cross-sectional morphology of oxidation at 750 °C for 100 h shows that the oxide layer (20.00 μm) in the TMCs with 10.0 vol% SiCp after oxidation was denser and thinner and was 82.13% thinner than that of the matrix (98.00 μm). The parabolic rate constant (k) of the oxidized composites decreases with the increase of SiCp content at 750 °C and 850 °C. In particular, the composites with 10 vol% SiCp content have smaller k. All the results show that the addition of SiCp in TMCs can improve high-temperature oxidation resistance.
Availability note (English)
Available from: http://dx.doi.org/10.1007/s00339-020-3431-xAdditional details
Identifiers
Publishing Information
- Journal Title
- Applied Physics. A, Materials Science and Processing (Print)
- Journal Volume
- 126
- Journal Issue
- 4
- Journal Page Range
- p. 1-10
- ISSN
- 0947-8396
- CODEN
- APAMFC
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 51053601
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; CHEMICAL REACTION KINETICS; LAYERS; MICROSTRUCTURE; MILLING; MORPHOLOGY; OXIDATION; PARTICLES; POWDER METALLURGY; REINFORCED MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES; SILICON OXIDES; SINTERING; TEMPERATURE RANGE 1000-4000 K; TITANIUM; TITANIUM CARBIDES; TITANIUM OXIDES; TITANIUM SILICIDES; X-RAY DIFFRACTION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; COHERENT SCATTERING; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; FABRICATION; KINETICS; MACHINING; MATERIALS; METALLURGY; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; REACTION KINETICS; SCATTERING; SILICIDES; SILICON COMPOUNDS; TEMPERATURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- AID: 254