Low temperature thermal conductivity of P-type InSb

The thermal conductivity of heavily doped p-type InSb is analyzed at low temperatures in terms of the scattering of phonons by holes for q≤ 2kf together with boundary, point defects and phonons. For heavily doped samples with an impurity concentration of 6x 10 18 cm-3 all the holes are free and the simplified expression of Zima n for hole (electron) - phonon scattering is utilized. In the framework of Callaway model, the predicted thermal conductivity is in fairly good quantitative agreement with the experimental values available in the literature. (author). 14 refs., 2 figs., 1 table