Published July 30, 2012
| Version v1
Journal article
Fano-Kondo oscillations of the conductance and thermopower in a mesoscopic transistor
Creators
- 1. National Institute of Materials Physics, 77125 Bucharest-Magurele (Romania)
Description
We study the conductance G and Seebeck coefficient S of a side-coupled double quantum dot system. The transport properties are the result of the competition between the Fano interference and Kondo correlations, being also controlled by the Coulomb blockade of the multilevel side-dot. The external parameters are the gate potential Vg applied on the side-dot and the temperature. When Vg is varied continuously the blockade is switched on and off periodically, resulting in oscillations of the transport coefficients. The profile of the oscillations and the temperature dependence are studied. An extended Anderson model and the Keldysh transport formalism are used.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/376/1/012019Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 376
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1742-6596
Conference
- Title
- 14. international conference on transport in interacting disordered systems
- Acronym
- TIDS-14
- Dates
- 5-8 Sep 2011
- Place
- Acre (Israel)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43107706
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CORRELATIONS; COULOMB FIELD; ELECTRIC CONDUCTIVITY; FANO FACTOR; INTERFERENCE; KONDO EFFECT; OSCILLATIONS; PERIODICITY; POTENTIALS; QUANTUM DOTS; TEMPERATURE DEPENDENCE; THERMOELECTRICITY; TRANSISTORS
- Descriptors DEC
- DIMENSIONLESS NUMBERS; ELECTRIC FIELDS; ELECTRICAL PROPERTIES; ELECTRICITY; NANOSTRUCTURES; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; VARIATIONS