Properties of Cu-doped ZnO films by RF sputtering method: Thickness dependence
Creators
- 1. Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)
- 2. U.C.o.E., Punjabi University, Patiala, Punjab (India)
- 3. Nano Materials Analysis Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
- 4. Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)
Description
We present results concerning the thickness dependence of structural, morphological and optical properties of the Zn0.98Cu0.02O films deposited on glass substrates using radio frequency (RF) sputtering method. The microstructure and the chemical state of oxygen, copper and zinc in ZnO and Zn0.98Cu0.02O films were investigated by X-ray diffraction spectroscopy (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. The results indicate that Zn0.98Cu0.02O films are the wurtzite structure with strong c-axis orientation. Crystallinity of the films is closely related to the film thickness. With increasing film thickness, there are more surface (mainly nanopores) defects existing in the Zn0.98Cu0.02O films and surface roughness increases. XRD and XPS data show that the valence state of copper in the Zn0.98Cu0.02O films is Cu2+. The transparency of all films is more than 85% in the visible region.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.materresbull.2012.04.103Additional details
Identifiers
- DOI
- 10.1016/j.materresbull.2012.04.103;
- PII
- S0025-5408(12)00307-8;
Publishing Information
- Journal Title
- Materials Research Bulletin
- Journal Volume
- 47
- Journal Issue
- 10
- Journal Page Range
- p. 2891-2894
- ISSN
- 0025-5408
- CODEN
- MRBUAC
Conference
- Title
- 2011 international forum on functional materials; AFM-2: 2. special symposium on advances in functional materials
- Acronym
- IFFM2011
- Dates
- 28-31 Jul 2011
- Place
- Jeju Island (Korea, Republic of)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45036480
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL STATE; DEPOSITS; DOPED MATERIALS; MICROSTRUCTURE; SPUTTERING; SUBSTRATES; SURFACES; THICKNESS; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; ELECTRON SPECTROSCOPY; FILMS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SCATTERING; SPECTROSCOPY; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.