Preparation of copper doped DLC films by DC PE-CVD method

We used PECVD method for deposition of Cu incorporated DLC thin films from CH₄/Ar gas mixture. The size of nanoparticles varied with changing the deposition conditions in the range of tenth to hundreds of nm. After annealing process, new small Cu particles appeared in the space between the as deposited ones, and all the particles were distributed more homogenous within the films. The resistivity of the DLC films decreased first with adding of copper to 10 to 6·10³ Ωcm, and second with the annealing process to 4·10^-2 to 3 Ωcm. Raman spectra show the tendency of DLCs to become more graphitic with increasing annealing temperature, which may be one possible contribution to increased conductivity of the annealed Cu-DLC films. (authors)