High energy ion implantation studies on GaAs and InP

High energy ion implantation in III-V materials is a very promising line of technology processing which can be used for many device applications. However, the high energy ion implantation induced defects play a key role in modifying the physical properties of the materials. For selective area and uniform doping, it is the most powerful and reliable technique. The effect of 100 MeV 28Si ion implantation on the electrical characteristics of undoped semi-insulating (SI) GaAs is discussed. The investigations on the electrical characteristics of 50 MeV 7Li ion implanted SI-InP is also discussed. The analyses of the implantation defects and profiles on the 100 and 80 MeV 28Si implanted SI-GaAs and 50 MeV 7Li implanted SI-InP using Scanning Electron Microscope and Atomic Force Microscope are presented. Extensive studies on the current-voltage and capacitance-voltage characteristics of 50 MeV 7Li irradiated Pd/n-GaAs Schottky Barrier diodes has been carried out. Elastic Recoil Detection Analysis (ERDA) with high energy heavy ion beam on the as-grown and hydrogen and oxygen ion implanted SI-GaAs are presented in detail