Published March 1984
| Version v1
Journal article
Photoluminescence investigation of defects after ion-implantation and laser annealing
Creators
- 1. Friedrich-Schiller-Universitaet, Jena (German Democratic Republic). Sektion Physik
Description
Photoluminescence (PL) has been used to study defects in As+ and Sb+ implanted silicon after laser annealing by a Q switched Nd-glass laser beam. The depth distribution of the defects was determined by measuring the PL signals after successive removal of thin surface layers. The defect generation and transformation is described by a simple kinetic model. From this, depth distributions of defects after ion implantation and laser annealing can be calculated. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res., Sect. B
- Journal Volume
- 230
- Journal Issue
- 1-3
- Series
- CODEN: NIMBE.;Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 757-760
- ISSN
- 0168-583X
Conference
- Title
- 10. international conference on atomic collisions in solids.
- Dates
- 18-22 Jul 1983.
- Place
- Bad Iburg (Germany, F.R.).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 15065423
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ANNEALING; ANTIMONY IONS; ARSENIC IONS; COMPUTERIZED SIMULATION; CRYSTAL DEFECTS; DEPTH; EXPERIMENTAL DATA; ION IMPLANTATION; LASER-RADIATION HEATING; PHOTOLUMINESCENCE; RADIATION EFFECTS; SILICON; THEORETICAL DATA
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; DATA; DIMENSIONS; ELEMENTS; EMISSION; HEAT TREATMENTS; HEATING; INFORMATION; IONS; LUMINESCENCE; NUMERICAL DATA; PHOTON EMISSION; PLASMA HEATING; SEMIMETALS; SIMULATION