Effect of fluorine doping on highly transparent conductive spray deposited nanocrystalline tin oxide thin films
- 1. Thin film Laboratory, Department of Physics and Electronics, Gopal, Krishna Gokhale, College, Kolhapur- 416 012, M.S. (India)
- 2. Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Gwangju 500-757 (Korea, Republic of)
- 3. Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)
Description
The undoped and fluorine doped thin films are synthesized by using cost-effective spray pyrolysis technique. The dependence of optical, structural and electrical properties of SnO2 films, on the concentration of fluorine is reported. Optical absorption, X-ray diffraction, scanning electron microscope (SEM) and Hall effect studies have been performed on SnO2:F (FTO) films coated on glass substrates. The film thickness varies from 800 to 1572 nm. X-ray diffraction pattern reveals the presence of cassiterite structure with (2 0 0) preferential orientation for FTO films. The crystallite size varies from 35 to 66 nm. SEM and AFM study reveals the surface of FTO to be made of nanocrystalline particles. The electrical study reveals that the films are degenerate and exhibit n-type electrical conductivity. The 20 wt% F doped film has a minimum resistivity of 3.8 x 10-4 Ω cm, carrier density of 24.9 x 1020 cm-3 and mobility of 6.59 cm2 V-1 s-1. The sprayed FTO film having minimum resistance of 3.42 Ω/cm2, highest figure of merit of 6.18 x 10-2 Ω-1 at 550 nm and 96% IR reflectivity suggest, these films are useful as conducting layers in electrochromic and photovoltaic devices and also as the passive counter electrode.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2009.07.035Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2009.07.035;
- PII
- S0169-4332(09)01029-0;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 255
- Journal Issue
- 23
- Journal Page Range
- p. 9358-9364
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44017803
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; ATOMIC FORCE MICROSCOPY; CARRIER DENSITY; CRYSTALS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTROCHROMISM; FLUORINE ADDITIONS; HALL EFFECT; PHOTOVOLTAIC EFFECT; PYROLYSIS; REFLECTIVITY; SCANNING ELECTRON MICROSCOPY; SPRAYS; SUBSTRATES; SURFACES; THIN FILMS; TIN OXIDES; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; COHERENT SCATTERING; DECOMPOSITION; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELECTRO-OPTICAL EFFECTS; FILMS; MATERIALS; MICROSCOPY; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; SCATTERING; SORPTION; SURFACE PROPERTIES; THERMOCHEMICAL PROCESSES; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.