Published February 2008 | Version v1
Journal article

Monte Carlo simulation and study of thin film growth process

  • 1. Shenyang Key Laboratory of Photoelectronic Devices and Detection Technology, College of Physics, Liaoning Univ., Shenyang (China)

Description

The effect of the substrate temperature and the rest energy of incident particles on the island morphology and size at the early stage of thin film growth are studied by Monte-Carlo simulation. In our model, three processes are considered: particle deposition, adatom diffusion and adatom reevaporation. The results show that, with temperature increasing from 200 K to 260 K, the island growth transits from sporadic to fractal shape, as the temperature is relatively low (200 K), with increasing rest energy of incident particles, the same evolution of island morphology is also observed. Further study shows that, with increasing temperature or increasing rest energy of incident particles, diffusivity of deposit particles is prominently improved, then island morphology is changed. (authors)

Additional details

Publishing Information

Journal Title
Journal of Atomic and Molecular Physics
Journal Volume
25
Journal Issue
1
Journal Page Range
p. 47-52
ISSN
1000-0364

Optional Information

Notes
5 figs., 9 refs.