Simulation of charging phenomena in ion implantation into the micro structure pattern

The charging of devices in high current ion implantation has become a serious problem. We have suggested that the negative ion has an effect on this problem. We have calculated the charging-up potential of insulated region considering the micro device structure, and compared the positive and negative ion implantation. We have reached the following results: the larger the grounded area and the bigger the secondary electron emission factor of grounded region, the surface potential of insulated region is lower in both positive and negative ion implantation. Especially in negative ion implantation the saturated surface potential is getting near zero volt. In negative ion implantation to the micro structure pattern, the surface voltage saturates at a low voltage, which is suitable to the ion implantation into semiconductor devices. (author)