Influence of target temperature on metallic compound growth for pulsed ion implantation
- 1. Beijing Normal Univ., BJ (China). Inst. of Low Energy Nuclear Physics
Description
Growth of metallic compounds during the pulsed Ti or Mo ion implantation into steel and Al is studied experimentally and theoretically. The relation of the compound growth law with target temperature rise is given. A comparison of the results of pulsed ion implantation with the in situ TEM observation shows that the growth temperature during implantation (400 degree C) is much lower than that during annealing (600 degree C), which indicates that the flux of vacancies and interstitials can promote the growth of metallic compounds. More than ten kinds of the compounds have been obtained using MEVVA ion implantation. Because the compounds are formed in the implanted layer, hardness of the implanted layer increases and the wear property is improved
Additional details
Publishing Information
- Journal Title
- Nuclear Techniques
- Journal Volume
- 17
- Journal Issue
- 1
- Journal Page Range
- p. 7-12.
- ISSN
- 0253-3219
- CODEN
- NUTEDL
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 26013955
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; ANNEALING; CRYSTAL GROWTH; INTERMETALLIC COMPOUNDS; ION IMPLANTATION; MELTING; MOLYBDENUM IONS; PULSES; RADIATION HARDENING; STEELS; SURFACE HARDENING; TEMPERATURE DEPENDENCE; TITANIUM IONS; WEAR RESISTANCE; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; CARBON ADDITIONS; CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; ELEMENTS; HARDENING; HEAT TREATMENTS; IONS; IRON ALLOYS; IRON BASE ALLOYS; MECHANICAL PROPERTIES; METALS; PHASE TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SCATTERING; SURFACE TREATMENTS