Published 1990 | Version v1
Book

Effect of the deposition parameters on the electro optical properties and morphology of microcrystalline hydrogenated silicon alloys

  • 1. Lab. de Microelectronica, Univ. de Sao Paulo, Caixa Postal 8174, 05508 San Paulo (Brazil)
  • 2. CFM/IST, Univ. Nova de Lisboa, 1000 Lisboa (Portugal)

Description

Microcrystalline phosphorus doped hydrogenated silicon alloy films were deposited in a remote plasma CVD system. The films properties were studied as a function of r.f. power density and hydrogen concentration on the reaction gases mixture. Properties of the deposited films are extremely sensitive to the r.f. power density in the studied range of 250 mW/cm2 to 625 mW/cm2. This paper reports that very low values of electrical resistivities were obtained

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (USA)
Imprint Title
Twenty first IEEE photovoltaic specialists conference 1990 (Conference Record)
Imprint Pagination
1673 p.
Journal Page Range
p. 1588-1590.

Conference

Title
21. Institute for Electrical and Electronics Engineers (IEEE) photovoltaic specialists conference.
Dates
21-25 May 1990.
Place
Kissimmee, FL (USA).

Optional Information

Secondary number(s)
CONF-900542--.