Published June 24, 2011 | Version v1
Journal article

Nonlinear I-V relations and hysteresis in solid state devices based on oxide mixed-ionic-electronic conductors

  • 1. Physics Department, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

Description

The current-voltage, I-V, relations as well as the defect distributions are calculated for solid state devices in which the acceptors are mobile. The devices are of the metal|oxide|metal (MOM) type, where the oxide is a mixed-ionic-electronic conductor. The electrodes are blocking for material exchange. I-V relations are calculated for cyclic voltammetry, high amplitude ac voltage and low amplitude ac voltage from which the ac impedance is derived. The results exhibit nonlinear I-V relations, energy storage, hysteresis, negative resistance and quasi-switching.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/22/25/254024

Additional details

Identifiers

DOI
10.1088/0957-4484/22/25/254024;
PII
S0957-4484(11)75223-0;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
22
Journal Issue
25
Journal Page Range
[10 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43026844
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
AMPLITUDES; CURRENTS; DEFECTS; DISTRIBUTION; ELECTRIC POTENTIAL; ELECTRODES; ENERGY STORAGE; EQUIPMENT; HYSTERESIS; IMPEDANCE; METALS; NANOSTRUCTURES; OXIDES; SOLIDS; VOLTAMETRY
Descriptors DEC
CHALCOGENIDES; ELEMENTS; OXYGEN COMPOUNDS; STORAGE