Published June 24, 2011
| Version v1
Journal article
Nonlinear I-V relations and hysteresis in solid state devices based on oxide mixed-ionic-electronic conductors
Creators
- 1. Physics Department, Technion-Israel Institute of Technology, Haifa 32000 (Israel)
Description
The current-voltage, I-V, relations as well as the defect distributions are calculated for solid state devices in which the acceptors are mobile. The devices are of the metal|oxide|metal (MOM) type, where the oxide is a mixed-ionic-electronic conductor. The electrodes are blocking for material exchange. I-V relations are calculated for cyclic voltammetry, high amplitude ac voltage and low amplitude ac voltage from which the ac impedance is derived. The results exhibit nonlinear I-V relations, energy storage, hysteresis, negative resistance and quasi-switching.
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/22/25/254024Additional details
Identifiers
- DOI
- 10.1088/0957-4484/22/25/254024;
- PII
- S0957-4484(11)75223-0;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 22
- Journal Issue
- 25
- Journal Page Range
- [10 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43026844
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- AMPLITUDES; CURRENTS; DEFECTS; DISTRIBUTION; ELECTRIC POTENTIAL; ELECTRODES; ENERGY STORAGE; EQUIPMENT; HYSTERESIS; IMPEDANCE; METALS; NANOSTRUCTURES; OXIDES; SOLIDS; VOLTAMETRY
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; OXYGEN COMPOUNDS; STORAGE