Published December 31, 2003 | Version v1
Journal article

Lattice sites of ion-implanted Cu atoms in diamond

Description

Radioactive 67Cu atoms were accelerated to 60 keV at the online isotope separator ISOLDE at CERN, and implanted into a type IIa natural diamond sample to a dose of 2x1012 cm-2. The channeling of β--particles and conversion electrons emitted in the decay of 67Cu and 67Zn*, respectively, were monitored about the three major axial directions with a two-dimensional position-sensitive detector. The electron emission channeling data were collected from the room-temperature-implanted sample and after annealing at 1200 K. The observed channeling patterns were fitted with simulations based on the many beam formalism of electron motion through a crystal lattice. In the as-implanted sample, 25% of the Cu atoms were located a mean, isotropic displacement of 0.25(5) A from substitutional sites, and the remainder, fR=75%, at sites that gave an isotropic emission yield. Annealing at 1200 K results in enhanced axial and planar channeling effects. The fits to the data yield either a fraction f1=45(5)% of Cu atoms located 0.24(4) A from substitutional sites and fR=57%, or a fraction f1=10(2)% at substitutional sites, a fraction f2=50(5)% at mean isotropic displacement of 0.5 A from substitutional sites, and a 'random' fraction fR=40%

Additional details

Identifiers

DOI
10.1016/j.physb.2003.09.110;
PII
S0921452603007580;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
340-342
Journal Issue
3-4
Journal Page Range
p. 89-93
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
22. international conference on defects in semiconductors
Dates
28 Jul - 1 Aug 2003
Place
Aarhus (Denmark)

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.