Gamma ray irradiation effect in cubic crystal silicon carbide MOS structure

Recently 3C-SiC thin film crystals of good quality and large area have become to be produced on silicon bases with good reproducibility by hetero-epitaxial CVD process, and the elements using this have become to be made for trial. The application of these elements as the semiconductor elements used in severe radiation environment such as space and nuclear reactors is expected. Therefore, it is necessary to evaluate the radiation resistance for both the crystals and the elements. In this study, the C-V characteristics of 3C-SiC MOS capacitors were measured, and the gamma ray irradiation effect on the interface level generation and the fixed charge accumulation arising at 3C-SiC/SiO2 inter faces and in the SiO2 films on 3C-SiC was investigated. Moreover, 3C-SiC MOS was made by using hydrogen combustion oxidation and dry oxidation, and the effect that the difference in oxidation methods exerted to the irradiation effect was examined. At the same time, the irradiation experiment on Si MOS capacitors was carried out for comparison. The samples, the experimental methods and the results are reported. (K.I.)