Published March 2012 | Version v1
Journal article

Submicron-scale depth profiling of residual stress in amorphous materials by incremental focused ion beam slotting

  • 1. School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom)
  • 2. Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States)
  • 3. Materials Science and Engineering, Tohoku University, Sendai (Japan)

Description

This paper reports a new technique, namely the incremental micro-slotting cutting method, for the investigation of residual stress profiles as a function of depth on a micron scale. The residual-stresses in a peened bulk-metallic glass (BMG) (Zr50Cu40Al10, in atomic per cent) are estimated using finite-element analysis of the surface relaxations, as measured by digital image correlation analysis from field-emission gun scanning electron microscopy images, which occur when a micro-slot is stepwise micro-machined by focused ion beam. The calculation algorithm, which solves this inverse problem of residual-stress estimation, is based on the unit pulses method and is stabilized by a Tikhonov regularization scheme. It is demonstrated on a peened BMG that the new technique allows residual-stress profiles in amorphous materials to be inferred with high spatial definition (∼400 nm). Observations point to the scalability of this method to study residual-stress profiles in volumes as small as 1 × 1 × 0.2 μm3 or less, and is particularly well suited to glasses, but can also be applied to crystalline materials.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.actamat.2011.12.035

Additional details

Identifiers

DOI
10.1016/j.actamat.2011.12.035;
PII
S1359-6454(11)00897-4;

Publishing Information

Journal Title
Acta Materialia
Journal Volume
60
Journal Issue
5
Journal Page Range
p. 2337-2349
ISSN
1359-6454
CODEN
ACMAFD

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43117535
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALGORITHMS; FIELD EMISSION; FINITE ELEMENT METHOD; GLASS; IMAGES; ION BEAMS; MATERIALS; METALLIC GLASSES; RELAXATION; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SURFACES
Descriptors DEC
BEAMS; CALCULATION METHODS; ELECTRON MICROSCOPY; EMISSION; MATHEMATICAL LOGIC; MATHEMATICAL SOLUTIONS; MICROSCOPY; NUMERICAL SOLUTION; STRESSES

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.