Published February 15, 2012 | Version v1
Journal article Metadata-only

Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions

Creators

  • 1. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-0047 (Japan)
  • 2. National Institute for Materials Science, Tsukuba 305-0047 (Japan)
  • 3. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan)
  • 4. Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577 (Japan)

Description

The effect of B concentration on the tunneling magnetoresistance (TMR) of (Co25Fe75)100-xBx/MgO/(Co25Fe75)100-xBx (x = 22 and 33) pseudo-spin-valve (P-SV) magnetic tunnel junctions (MTJs) was investigated. The TMR ratios for optimally annealed MTJs with x = 22 and 33 were 340% and 170%, respectively, at room temperature. High resolution transmission electron microscopy (HRTEM) observation showed a weaker (001) texture in the MgO barrier in the MTJ with x = 33. The bottom electrode was not fully crystallized even with a considerable amount of B in the (Co25Fe75)67B33, while good epitaxy was observed between (001) textured MgO and (Co25Fe75)78B22 electrodes.

Additional details

Identifiers

DOI
10.1063/1.3688039;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
111
Journal Issue
4
Journal Page Range
p. 043913-043913.3
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43129246
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; BORON ALLOYS; COBALT ALLOYS; CRYSTALLIZATION; EPITAXY; IRON ALLOYS; MAGNESIUM OXIDES; MAGNETORESISTANCE; MICROSTRUCTURE; SPIN; SUPERCONDUCTING JUNCTIONS; TEMPERATURE RANGE 0273-0400 K; TEXTURE; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL EFFECT; VALVES
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; ALLOYS; ANGULAR MOMENTUM; CHALCOGENIDES; CONTROL EQUIPMENT; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; EQUIPMENT; FLOW REGULATORS; HEAT TREATMENTS; MAGNESIUM COMPOUNDS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS

Optional Information

Notes
(c) 2012 American Institute of Physics