Published June 2009 | Version v1
Journal article Metadata-only

Improvement of crystalline quality of InGaN epilayers on various crystal planes of ZnO substrate by metal-organic vapor phase epitaxy

Creators

  • 1. Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, 468-8502 Nagoya (Japan)

Description

We demonstrated InxGa1-xN epitaxial growth with InN mole fractions of x=0.10 to 0.23 on an m-plane ZnO substrate by metal-organic vapor phase epitaxy. The crystalline quality of the epilayers was found to be much higher than that of epilayers grown on a GaN template on an m-plane SiC substrate. The strain of the epilayers was investigated by X-ray reciprocal space mapping. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200880863

Additional details

Identifiers

DOI
10.1002/pssc.200880863;

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Print)
Journal Volume
6
Journal Issue
Suppl.2
Journal Page Range
p. S486-S489
ISSN
1862-6351

Conference

Title
International workshop in nitride semiconductors (IWN 2008)
Dates
6-10 Oct 2008
Place
Montreux (Switzerland)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
40070458
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL STRUCTURE; GALLIUM NITRIDES; INDIUM NITRIDES; ORGANOMETALLIC COMPOUNDS; STRAINS; SUBSTRATES; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SCATTERING; ZINC COMPOUNDS

Optional Information

Notes
With 6 figs., 3 tabs., 5 refs.; SICI: 1862-6351(200906)6:5+<::AID-PSSC200880863>3.0.TX;2-7