On determination of certain parameters of semiconductor materials and devices by the electron-sounder method

The limitations have been formulated and the evaluations have been given of the sensitivity of the induced current method for measuring the length of diffusion, the rate surface recombination and the average energy of formation of a pair of carriers. It has been shown that the accuracy in the determination of the p-n junction site is related to the choice of the accelerating voltage of the probe and the difference in the lengths of diffusion on both sides of the p-n junction. The results of calculations are compared to experimental data