Published April 1, 2006
| Version v1
Journal article
Ferromagnetic semiconductors for spintronics
Creators
- 1. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan) and ERATO Semiconductor Spintronics Project, JST (Japan)
Description
An overview is given for the current understanding of the ferromagnetism in manganese-doped III-V compounds together with the description on prototype device structures that allow us to explore a number of new possibilities in spintronics
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2005.12.007;
- PII
- S0921-4526(05)01396-7;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 376-377
- Journal Page Range
- p. 19-21
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 23. international conference on defects in semiconductors
- Dates
- 24-29 Jul 2005
- Place
- Awaji Island (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37073056
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOPED MATERIALS; FERROMAGNETISM; MANGANESE ADDITIONS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SPIN
- Descriptors DEC
- ALLOYS; ANGULAR MOMENTUM; MAGNETISM; MANGANESE ALLOYS; MATERIALS; PARTICLE PROPERTIES; TRANSITION ELEMENT ALLOYS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.