Published June 16, 2003
| Version v1
Journal article
Microscopic mechanisms of ablation and micromachining of dielectrics by using femtosecond lasers
- 1. State Key Laboratory for Optical and Electric Materials and Technology, Zhongshan University, Guangzhou, 510275 (China)
- 2. Laboratory for High Intensity Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800 (China)
Description
We report measurements of damage threshold and ablation depth for SiO2 and CaF2 irradiated under lasers at wavelengths of 800 and 400 nm for duration of 45-800 fs. These results can be well understood by using a developed avalanche model. The model includes the production of conduction band electrons (CBEs), laser energy deposition, and CBE diffusion. The evolution of microexplosion is investigated based on this model
Additional details
Identifiers
- DOI
- 10.1063/1.1583857;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 82
- Journal Issue
- 24
- Journal Page Range
- p. 4382-4384
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35048071
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ABLATION; CALCIUM FLUORIDES; CARRIER LIFETIME; DIELECTRIC MATERIALS; DIFFUSION; LASER BEAM MACHINING; LASERS; MACHINING; PHOTOCONDUCTIVITY; SILICON OXIDES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CALCIUM COMPOUNDS; CALCIUM HALIDES; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; LIFETIME; MACHINING; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.